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The purpose of this article is to examine the methodsand equipment for abating waste gases and water produced during themanufacture of semiconductor materials and devices. Threeseparating methods and equipment are presented in this article tocontrol three different groups of electronic wastes. The firstgroup includes arsine and phosphine emitted during the processes ofsemiconductor materials manufacture. The abatement procedure forthis group of pollutants consists of adding iodates, cupric andmanganese salts to a multiple shower tower (MST) structure. Thesecond group includes pollutants containing arsenic, phosphorus,HF, HCl, NO2, and SO3 emitted during the manufacture ofsemiconductor materials and devices. The abatement procedureinvolves mixing oxidants and bases in an oval column with aseparator in the middle. The third group consists of the ions ofAs, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in aflocculation-sedimentation compact device equipment. Test resultsshowed that all waste gases and water after the abatementprocedures presented in this article passed the discharge standardsset by the state Environmental Protection Administrationof china.
